Key Lab for Advanced Materials, Institute of Applied Chemistry, East China University of Science and Technology, Shanghai, People's Republic of China.
Nanotechnology. 2011 May 20;22(20):205704. doi: 10.1088/0957-4484/22/20/205704. Epub 2011 Mar 28.
A soluble graphite oxide (GO) axially substituted gallium phthalocyanine (PcGa) hybrid material (GO-PcGa) was for the first time synthesized by the reaction of tBu(4)PcGaCl with GO in anhydrous DMSO at 110 °C in the presence of K(2)CO(3). The formation of a Ga-O bond between PcGa and GO has been confirmed by x-ray photoelectron spectroscopy. In contrast to GO, the D and G bands of GO-PcGa in the Raman spectrum are shifted to the lower wavenumbers by Δν = 11 and 18 cm(-1), respectively. At the same level of concentration of 0.1 g l(-1), GO-PcGa exhibit much larger nonlinear optical extinction coefficients and strong optical limiting performance than GO, tBu(4)PcGaCl and C(60) at both 532 and 1064 nm, implying a remarkable accumulation effect as a result of the covalent link between GO and PcGa. GO-PcGa possesses three main mechanisms for the nonlinear optical response-nonlinear light scattering, two-photon absorption and reverse saturable absorption for the 532 nm pulses and nonlinear light scattering for the 1064 nm pulses. tBu(4)PcGaCl does not make any significant contribution to the optical limiting at 1064 nm, while GO-PcGa has a much greater optical limiting response than GO at this wavelength, this suggesting that the PcGa moiety could certainly play an unknown but important role in the GO-PcGa material system.
一种可溶性氧化石墨（GO）轴向取代的酞菁镓（PcGa）杂化材料（GO-PcGa）首次通过在无水 DMSO 中于 110°C 下用 tBu(4)PcGaCl 与 GO 在 K(2)CO(3)的存在下反应合成。通过 X 射线光电子能谱证实了 PcGa 和 GO 之间 Ga-O 键的形成。与 GO 相比，GO-PcGa 的拉曼光谱中 D 和 G 带分别向低波数移动了 Δν = 11 和 18 cm(-1)。在相同的浓度为 0.1 g l(-1)的水平下，GO-PcGa 在 532 和 1064nm 处的非线性光学消光系数和强光学限制性能都比 GO、tBu(4)PcGaCl 和 C(60)大得多，这表明由于 GO 和 PcGa 之间的共价键，存在显著的累积效应。GO-PcGa 具有三种主要的非线性光学响应机制——非线性光散射、双光子吸收和 532nm 脉冲的反饱和吸收以及 1064nm 脉冲的非线性光散射。tBu(4)PcGaCl 对 1064nm 处的光学限制没有任何显著贡献，而在该波长下，GO-PcGa 的光学限制响应比 GO 大得多，这表明 PcGa 部分在 GO-PcGa 材料体系中肯定起着未知但重要的作用。
