Qiu Jijun, Li Xiaomin, Wu Yongqing, He Weizhen, Park Se-Jeong, Piao Zhonglie, Kim Hyung-Kook, Hwang Yoon-Hwae, Zhao Junliang, Wang Ye, Sun Xiaowei
RCDAMP, Pusan National University, Busan 609-735, Korea.
J Nanosci Nanotechnol. 2011 Jan;11(1):463-9. doi: 10.1166/jnn.2011.3203.
Ultralong ZnO nanorod arrays with a length of 10 microm were synthesized using a preheated hydrothermal-solution precursor, and their optical and electrical properties were studied using photoluminescence (PL) spectra and field effect transistors (FETs). The PL spectra showed ultraviolet, orange, and red emissions and had different temperature dependences with increasing temperature. The high-resolution photoluminescence spectra showed that the ultraviolet (UV) emission had different origins within different temperature ranges. The parameters describing the temperature dependence of the peak position shift, intensity, and full width at half maximum were evaluated using different models. After the fabrication of individual nanorod FETs, the ultralong ZnO NRs showed a clear n-type gate modulation with a typical electron concentration of 10(17) cm(-3) and a typical electron mobility of 35.7 cm2/V x s.
使用预热的水热溶液前驱体合成了长度为10微米的超长氧化锌纳米棒阵列,并使用光致发光(PL)光谱和场效应晶体管(FET)研究了它们的光学和电学性质。PL光谱显示出紫外、橙色和红色发射,并且随着温度升高具有不同的温度依赖性。高分辨率光致发光光谱表明,紫外(UV)发射在不同温度范围内有不同的起源。使用不同模型评估了描述峰值位置偏移、强度和半高宽的温度依赖性的参数。在制造单个纳米棒FET之后,超长氧化锌纳米棒显示出清晰的n型栅极调制,典型电子浓度为10(17) cm(-3),典型电子迁移率为35.7 cm2/V x s。