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一种具有控制邻近效应校正功能的菲涅耳波带片简化制造工艺。

A simplified fabrication process of Fresnel zone plates with controlling proximity effect correction.

作者信息

Jeon Sang Chul, Kim Deuk Su, Kim Ki Nam, Kim Kyung Min, Seo Chang Ho, Yoo Jung Jae, Lee Dong Kyu

机构信息

National NanoFab Center (NNFC), KAIST, Daejeon 305-806, Korea.

出版信息

J Nanosci Nanotechnol. 2011 Jan;11(1):503-6. doi: 10.1166/jnn.2011.3257.

Abstract

Fresnel zone plates (FZPs) for soft X-ray microscopy with an energy range of 284 eV to 540 eV are designed and fabricated in a simple method. An adequate aspect ratio of the resist mold for electroplating was obtained by the proximity effect correction technology for an incident electron beam on a single thick layer resist. Without additional complicated reactive ion etching, a sufficient electro plating mold for nickel structures was fabricated. The overall fabrication procedures which involve a mix-and-match overlay technique for electron beam lithography and an optic exposure system that centers the membrane on the nanostructures, and hybrid silicon etching technology in junction with deep anisotropy and a KOH wet method in order to release the backside Si substrates of the Si3N4 membranes with no deformation of FZPs are introduced. High quality nanostructures with minimum outermost zone widths of 50 nm and diameters of 120 microm were fabricated with simplified fabrication process and with cost-effective.

摘要

设计并采用一种简单方法制造了用于能量范围为284电子伏特至540电子伏特的软X射线显微镜的菲涅耳波带片(FZP)。通过对单厚层抗蚀剂上的入射电子束采用邻近效应校正技术,获得了用于电镀的抗蚀剂模具的合适长宽比。无需额外复杂的反应离子蚀刻,制造出了用于镍结构的足够的电镀模具。介绍了整个制造过程,该过程包括用于电子束光刻的混合匹配覆盖技术、将膜对准纳米结构的光学曝光系统,以及结合深各向异性的混合硅蚀刻技术和KOH湿法,以便在不使FZP变形的情况下释放Si3N4膜的背面硅基板。采用简化制造工艺且成本效益高,制造出了最外层区域宽度最小为50纳米、直径为120微米 的高质量纳米结构。

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