Department of Physics & Research Institute for Nano Science & Technology, Chungbuk National University, Cheongju 361-763, South Korea.
Nano Lett. 2011 Apr 13;11(4):1591-7. doi: 10.1021/nl1044692. Epub 2011 Mar 29.
We report on transport measurement performed on a room-temperature-operating ultrasmall Coulomb blockade devices with a silicon island of sub5 nm. The charge stability at 300K exhibits a substantial change in slopes and diagonal size of each successive Coulomb diamond, but remarkably its main feature persists even at low temperature down to 5.3K except for additional Coulomb peak splitting. This key feature of charge stability with additional fine structures of Coulomb peaks are successfully modeled by including the interplay between Coulomb interaction, valley splitting, and strong quantum confinement, which leads to several low-energy many-body excited states for each dot occupancy. These excited states become enhanced in the sub5 nm ultrasmall scale and persist even at 300K in the form of cluster, leading to the substantial modulation of charge stability.
我们报告了在具有亚 5nm 硅岛的室温工作的超微库仑阻塞器件上进行的输运测量。在 300K 时，电荷稳定性表现出每一个连续库仑菱形斜率和对角线尺寸的显著变化，但令人惊讶的是，除了额外的库仑峰劈裂外，即使在低至 5.3K 的低温下，其主要特征仍然存在。这种带有额外精细结构的库仑峰的电荷稳定性的关键特征，通过包括库仑相互作用、谷分裂和强量子限制之间的相互作用成功地进行了建模，这导致了每个点占据的几个低能多体激发态。这些激发态在亚 5nm 的超微尺度下增强，并以团簇的形式甚至在 300K 时持续存在，导致电荷稳定性的大幅调制。
