Tan Xiao-Hui, Ye Sheng-Lin, Liu Xu
State Key Laboratory for Modern Optical Instrumentation, ZheJiang University, Hang'zhou, China.
Opt Express. 2011 Mar 28;19(7):6609-15. doi: 10.1364/OE.19.006609.
We have developed a simple approach to fabricate wide band gap surface layer for Cu(In,Ga)Se2 (CIGS) thin film. The Cu depleted surface layer was reconstructed by an In-Ga-Se post deposition treatment at different temperatures, which was monitored by a light controlling method. A desirable Cu concentration in surface layer has been achieved after depositing a 80 nm thick In-Ga-Se layer at 400°C and the corresponding device performance is remarkably improved compared with device without surface modification. Additionally, the excess Cu(2-x)Se phase on the surface could also be eliminated by this method in case of high Cu/(In+Ga).
我们已经开发出一种简单的方法来制备用于铜铟镓硒（CIGS）薄膜的宽带隙表面层。通过在不同温度下进行铟-镓-硒后沉积处理来重构贫铜表面层，这一过程通过光控方法进行监测。在400°C沉积80纳米厚的铟-镓-硒层后，表面层实现了理想的铜浓度，与未进行表面改性的器件相比，相应器件的性能得到了显著改善。此外，在铜/（铟+镓）较高的情况下，该方法还可以消除表面上多余的Cu(2-x)Se相。
