Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin, USA.
Nanotechnology. 2011 Jun 3;22(22):225602. doi: 10.1088/0957-4484/22/22/225602. Epub 2011 Apr 1.
An aqueous solution-based doping strategy was developed for controlled doping impurity atoms into a ZnO nanowire (NW) lattice. Through this approach, antimony-doped ZnO NWs were successfully synthesized in an aqueous solution containing zinc nitrate and hexamethylenetetramine with antimony acetate as the dopant source. By introducing glycolate ions into the solution, a soluble antimony precursor (antimony glycolate) was formed and a good NW morphology with a controlled antimony doping concentration was successfully achieved. A doping concentration study suggested an antimony glycolate absorption doping mechanism. By fabricating and characterizing NW-based field effect transistors (FETs), stable p-type conductivity was observed. A field effect mobility of 1.2 cm(2) V(-1) s(-1) and a carrier concentration of 6 × 10(17) cm(-3) were achieved. Electrostatic force microscopy (EFM) characterization on doped and undoped ZnO NWs further illustrated the shift of the metal-semiconductor barrier due to Sb doping. This work provided an effective large-scale synthesis strategy for doping ZnO NWs in aqueous solution.
一种基于水溶液的掺杂策略被开发出来，用于将杂质原子精确地掺杂到 ZnO 纳米线（NW）晶格中。通过这种方法，成功地在含有硝酸锌和六亚甲基四胺的水溶液中，以乙酸锑作为掺杂源，合成了掺锑的 ZnO NW。通过向溶液中引入乙二酸盐离子，形成了一种可溶性的锑前体（锑乙二酸盐），并成功地实现了具有良好 NW 形态和可控锑掺杂浓度的 NW。通过对掺杂浓度的研究，提出了锑乙二酸盐吸收掺杂机制。通过制备和表征基于 NW 的场效应晶体管（FET），观察到了稳定的 p 型导电性。实现了 1.2 cm(2) V(-1) s(-1) 的场效应迁移率和 6 × 10(17) cm(-3) 的载流子浓度。对掺杂和未掺杂 ZnO NW 的静电力显微镜（EFM）表征进一步说明了由于 Sb 掺杂导致金属-半导体势垒的偏移。这项工作为在水溶液中掺杂 ZnO NW 提供了一种有效的大规模合成策略。
