School of Nano Engineering, Inje University, Gimhae, Gyungnam, Republic of Korea.
Chaos. 2011 Mar;21(1):013105. doi: 10.1063/1.3548064.
This paper presents a fully integrated circuit implementation of an operational amplifier (op-amp) based chaotic neuron model with a bipolar output function, experimental measurements, and analyses of its chaotic behavior. The proposed chaotic neuron model integrated circuit consists of several op-amps, sample and hold circuits, a nonlinear function block for chaotic signal generation, a clock generator, a nonlinear output function, etc. Based on the HSPICE (circuit program) simulation results, approximated empirical equations for analyses were formulated. Then, the chaotic dynamical responses such as bifurcation diagrams, time series, and Lyapunov exponent were calculated using these empirical equations. In addition, we performed simulations about two chaotic neuron systems with four synapses to confirm neural network connections and got normal behavior of the chaotic neuron such as internal state bifurcation diagram according to the synaptic weight variation. The proposed circuit was fabricated using a 0.8-μm single poly complementary metal-oxide semiconductor technology. Measurements of the fabricated single chaotic neuron with ± 2.5 V power supplies and a 10 kHz sampling clock frequency were carried out and compared with the simulated results.
本文提出了一种基于运算放大器（op-amp）的双极输出混沌神经元模型的全集成电路实现，实验测量和混沌行为分析。所提出的混沌神经元模型集成电路由几个运算放大器、采样保持电路、用于混沌信号产生的非线性函数块、时钟发生器、非线性输出函数等组成。基于 HSPICE（电路程序）模拟结果，制定了用于分析的近似经验方程。然后，使用这些经验方程计算了混沌动力学响应，如分岔图、时间序列和 Lyapunov 指数。此外，我们还进行了两个具有四个突触的混沌神经元系统的模拟，以确认神经网络的连接，并根据突触权重的变化得到了混沌神经元的正常行为，如内部状态分岔图。该电路采用 0.8μm 单多晶硅互补金属氧化物半导体技术制造。对采用±2.5V 电源和 10kHz 采样时钟频率的单个混沌神经元进行了测量，并与模拟结果进行了比较。
