Suppr超能文献

位错在任何密度下都会塞积。

Dislocations jam at any density.

机构信息

Department of Physics, University of Illinois at Urbana-Champaign, Loomis Laboratory of Physics, 1110 West Green Street, Urbana, Illinois, 61801-3080, USA.

出版信息

Phys Rev Lett. 2011 Mar 11;106(10):105501. doi: 10.1103/PhysRevLett.106.105501. Epub 2011 Mar 8.

Abstract

Crystalline materials deform in an intermittent way via dislocation-slip avalanches. Below a critical stress, the dislocations are jammed within their glide plane due to long-range elastic interactions and the material exhibits plastic response, while above this critical stress the dislocations are mobile (the unjammed phase) and the material flows. We use dislocation dynamics and scaling arguments in two dimensions to show that the critical stress grows with the square root of the dislocation density. Consequently, dislocations jam at any density, in contrast with granular materials, which only jam below a critical density.

摘要

结晶材料通过位错滑移雪崩以间歇的方式变形。在临界应力以下,由于长程弹性相互作用,位错在其滑移面内被卡住,材料表现出塑性响应,而在这个临界应力以上,位错是可动的(未被卡住的相),材料流动。我们在二维中使用位错动力学和标度分析,表明临界应力随位错密度的平方根增长。因此,位错在任何密度下都会被卡住,这与颗粒材料不同,颗粒材料仅在低于临界密度时才会卡住。

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验