Department of Materials Science and Engineering, Hongik University, Seoul, Korea.
Nanotechnology. 2011 Jun 10;22(23):235605. doi: 10.1088/0957-4484/22/23/235605. Epub 2011 Apr 12.
The work presents a facile, stepwise synthetic approach for the production of highly fluorescent InP/ZnS core/shell quantum dots (QDs) by using a safer phosphorus (P) precursor. First, InP quantum dots (QDs) were solvothermally prepared at 180 °C for 24 h by using a P source of P(N(CH(3))(2))(3). The as-grown InP QDs were consecutively placed in another solvothermal condition for ZnS shell overcoating. In contrast to the almost non-fluorescent InP QDs, due to their highly defective surface states, the ZnS-coated InP QDs were highly fluorescent as a result of effective surface passivation. After the shell growth, the resulting InP/ZnS core/shell QDs were subjected to a size-sorting processing, by which red- to green-emitting QDs with quantum yields (QYs) of 24-60% were produced. Solvothermal shell growth parameters such as the reaction time and Zn/In solution concentration ratio were varied and optimized toward the highest QYs of core/shell QDs.
这项工作提出了一种简便的逐步合成方法，用于通过使用更安全的磷（P）前体制备高荧光 InP/ZnS 核/壳量子点（QD）。首先，通过使用 P 源 P（N（CH（3））（2））（3），在 180°C 下将 InP 量子点（QD）溶剂热合成 24 小时。生长的 InP QD 随后连续置于另一个溶剂热条件下进行 ZnS 壳层包覆。与几乎无荧光的 InP QD 相比，由于其高度缺陷的表面状态，ZnS 包覆的 InP QD 由于有效的表面钝化而具有高荧光性。壳层生长后，所得的 InP/ZnS 核/壳 QD 进行了尺寸分选处理，由此产生了具有 24-60％量子产率（QY）的红色至绿色发射 QD。改变了溶剂热壳层生长参数，例如反应时间和 Zn/In 溶液浓度比，并对其进行了优化，以获得核/壳 QD 的最高 QY。
