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原位电化学监测有序介孔嵌段共聚物模板中的选择性刻蚀。

In situ electrochemical monitoring of selective etching in ordered mesoporous block-copolymer templates.

出版信息

ACS Appl Mater Interfaces. 2011 May;3(5):1375-9. doi: 10.1021/am2000505. Epub 2011 May 4.

Abstract

We present a simple in situ electrochemical probe for the selective etching of the PLA component of thin film poly(4-fluorostyrene)-b-poly(D,L-lactide) (PFS-b-PLA) mesoporous block copolymer templates with a range of highly ordered microphase morphologies. Etching rates between 0.6 and 0.9 nm s⁻¹ were measured in electric-field aligned standing PLA cylinders 12 nm wide and up to 800 nm long. The etching rate within a bicontinuous gyroid network morphology is comparable to that of the hexagonally ordered cylindrical array. A microphase-separated, nonaligned but film-spanning PLA pore structure is found in cylinder forming PFS-b-PLA films immediately after spin coating that could have applications in patterning of functional nanostructured arrays. Cross-film percolation of the PLA phase is confirmed electrochemically, with an etching rate approximately half that of the highly ordered morphologies. The etching rate is independent of template thickness in all three morphologies.

摘要

我们提出了一种简单的原位电化学探针,用于选择性刻蚀具有各种高度有序微相形态的薄膜聚(4-氟苯乙烯)-b-聚(D,L-丙交酯)(PFS-b-PLA)嵌段共聚物模板中的 PLA 成分。在电场定向的立构 PLA 圆柱中,我们测量到的刻蚀速率在 0.6 到 0.9nm/s 之间,这些 PLA 圆柱的宽度为 12nm,长度可达 800nm。在双连续 gyroid 网络形态中的刻蚀速率与六方有序圆柱阵列中的刻蚀速率相当。在旋涂后立即形成圆柱的 PFS-b-PLA 薄膜中,我们发现了一种微相分离、非定向但横跨薄膜的 PLA 孔结构,这在功能纳米结构阵列的图案化方面可能有应用。PLA 相的跨膜渗流通过电化学方法得到了证实,其刻蚀速率约为高度有序形态的一半。在所有三种形态中,刻蚀速率都与模板厚度无关。

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