Research Center of Laser Physics and Technology, Key Laboratory of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China.
Opt Lett. 2011 Apr 15;36(8):1485-7. doi: 10.1364/OL.36.001485.
A high-power 880-nm diode-directly-pumped passively mode-locked 1342 nm Nd:YVO₄ laser was demonstrated with a semiconductor saturable absorber mirror (SESAM). The laser mode radii in the laser crystal and on the SESAM were optimized carefully using the ABCD matrix formalism. An average output power of 2.3 W was obtained with a repetition rate of 76 MHz and a pulse width of 29.2 ps under an absorbed pump power of 12.1 W, corresponding to an optical-optical efficiency of 19.0% and a slope efficiency of 23.9%, respectively.
采用半导体可饱和吸收镜（SESAM），实现了高功率 880nm 半导体二极管直接抽运被动锁模 1342nmNd:YVO4 激光器。利用 ABCD 矩阵公式，对激光晶体和 SESAM 中的激光模式半径进行了仔细优化。在吸收泵浦功率为 12.1W 时，获得了重复频率为 76MHz、脉冲宽度为 29.2ps 的平均输出功率 2.3W，相应的光光效率为 19.0%，斜率效率为 23.9%。
