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声子模式对 H2(v, j)/D2(v, j)-Cu(1nn)散射过程的影响。

The effect of phonon modes on the H2(v, j)/D2(v, j)-Cu(1nn) scattering processes.

机构信息

Department of Physical Chemistry, Indian Association for the Cultivation of Science, Jadavpur, Kolkata-700 032, India.

出版信息

Phys Chem Chem Phys. 2011 Jun 7;13(21):10100-10. doi: 10.1039/c0cp00336k. Epub 2011 Apr 20.

DOI:10.1039/c0cp00336k
PMID:21509364
Abstract

We include the effect of the phonon modes originating from the three layers of Cu(1nn) surface atoms on the dynamics of incoming molecular [H(2)(v, j)/D(2)(v, j)] degrees of freedom (DOFs) through a mean-field approach, where the surface temperature is incorporated into the effective potential by considering Bose-Einstein probability (BEP) factor for the initial state distribution of the surface modes calculated within harmonic approximation. Such time and temperature dependent effective Hamiltonian is further subdivided assuming a weak coupling between the two sets of molecular DOFs, namely, (x, y, z, Z) and (X, Y), respectively, in particular, to reduce the computational cost and the corresponding coupled quantum dynamical equations of motion have been formulated in terms of Time Dependent Discrete Variable Representation (TDDVR) approach. We demonstrate the workability of TDDVR method to investigate the scattering of H(2)(v, j) on Cu(1nn) surface by calculating the reaction probabilities and scattering cross-sections. Calculated results show that the phonon modes affect (a) the state-to-state transition probabilities of the scattered H(2) molecule substantially but chemisorption and physisorption processes negligibly and (b) the reaction probability of the incoming D(2) molecule noticeably.

摘要

我们通过平均场方法将源于 Cu(1nn) 表面三层原子的声子模式对入射分子[H(2)(v, j)/D(2)(v, j)]自由度的动力学的影响考虑在内,其中表面温度通过考虑表面模式的初始态分布的玻色-爱因斯坦概率(BEP)因子而纳入有效势能中,该初始态分布是在谐波近似内计算的。在假定两组分子自由度(分别为(x, y, z, Z)和(X, Y))之间存在弱耦合的情况下,进一步细分了这种随时间和温度变化的有效哈密顿量,特别是为了降低计算成本,并根据时间相关离散变量表示(TDDVR)方法来制定相应的耦合量子动力学运动方程。我们通过计算反应概率和散射截面,展示了 TDDVR 方法在研究 H(2)(v, j)在 Cu(1nn)表面上散射的可行性。计算结果表明,声子模式显著影响(a)散射 H(2)分子的态-态跃迁概率,但对化学吸附和物理吸附过程影响可以忽略不计,以及(b)入射 D(2)分子的反应概率。

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