Faculty of Science, Kumamoto University, 2-39-1 Kurokami, Kumamoto, 860-8555, Japan.
Dalton Trans. 2011 Jun 14;40(22):6023-7. doi: 10.1039/c0dt01832e. Epub 2011 May 9.
Resonant and constant-initial state photoemission spectroscopies using synchrotron radiation were applied to investigate the valence-band electronic structure of a semi-conducting β-type iron-disilicide (β-FeSi(2)) thin film. The results clearly indicated that the component elements, iron (Fe) and silicon (Si), contribute differently to the valence band features; the Fe 3d orbitals mainly concentrate in the top region of the valence band while the Si 3s and 3p orbitals spread over the wide region of the valence band. The β-FeSi(2) thin film showed a typical p-type semi-conducting nature with a work function of 4.78 eV. The β-FeSi(2) film showed the Fe M(1)VV Auger lines around the kinetic energy of 88 eV. It would be expected from these observations that there exist strong interactions between iron and silicon atoms in the β-FeSi(2) film resulting in orbital mixing and band formation.
采用同步辐射的共振和恒初态光发射谱研究了半导体β型铁硅化物（β-FeSi(2)）薄膜的价带电子结构。结果清楚地表明，组成元素铁（Fe）和硅（Si）对价带特征有不同的贡献；Fe 3d 轨道主要集中在价带的顶部区域，而 Si 3s 和 3p 轨道则分布在价带的宽区域。β-FeSi(2)薄膜表现出典型的 p 型半导体性质，功函数为 4.78 eV。β-FeSi(2)薄膜在大约 88 eV 的动能处显示出 Fe M(1)VV 俄歇线。从这些观察结果可以预期，β-FeSi(2)薄膜中存在铁和硅原子之间的强烈相互作用，导致轨道混合和能带形成。
