Department of Mechanical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, People's Republic of China.
Nanotechnology. 2011 Jul 1;22(26):265611. doi: 10.1088/0957-4484/22/26/265611. Epub 2011 May 17.
High quality vertically aligned carbon nanotube (VACNT) arrays have been synthesized on bulk Al alloy (Al6063) substrates with an electron-beam (E-beam) evaporated Fe catalyst using low pressure chemical vapor deposition (LPCVD). The pretreatment process of the catalyst was shown to play a critical role. This was studied comprehensively and optimized to repeatedly grow high quality VACNT arrays within a wide range of thicknesses of catalyst layer (2-11 nm) and acetylene (C(2)H(2)) flow rates (100-300 sccm). The thermal performance of the resulting VACNT arrays was evaluated. The minimum interfacial thermal resistance of the Si/VACNT/Al interfaces achieved so far is only 4 mm(2) K W(-1), and the average value is 14.6 mm(2) K W(-1).
已经使用电子束(E 束)蒸发的 Fe 催化剂通过低压化学气相沉积(LPCVD)在块状 Al 合金(Al6063)衬底上合成了高质量的垂直排列碳纳米管(VACNT)阵列。催化剂的预处理过程被证明起着关键作用。对此进行了全面研究,并进行了优化,以在催化剂层(2-11nm)和乙炔(C(2)H(2))流速(100-300sccm)的较宽范围内反复生长高质量的 VACNT 阵列。评估了所得 VACNT 阵列的热性能。迄今为止,硅/ VACNT/Al 界面的最小界面热阻仅为 4mm2KW(-1),平均值为 14.6mm2KW(-1)。