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六配位和五配位全卤代二茂基合钼和铑的配合物。

Homoleptic hexa and penta gallylene coordinated complexes of molybdenum and rhodium.

机构信息

Anorganische Chemie II - Organometallics & Materials, Ruhr-Universität Bochum , D-44780 Bochum, Germany.

出版信息

Inorg Chem. 2011 Jun 20;50(12):5808-14. doi: 10.1021/ic200699f. Epub 2011 May 17.

DOI:10.1021/ic200699f
PMID:21591639
Abstract

The reactions of molybdenum(0) and rhodium(I) olefin containing starting materials with the carbenoid group 13 metal ligator ligand GaR (R = Cp*, DDP; Cp* = pentamethylcyclopentadienyl, DDP = HC(CMeNC(6)H(3)-2,6-(i)Pr(2))(2)) were investigated and compared. Treatment of [Mo(η(4)-butadiene)(3)] with GaCp* under hydrogen atmosphere at 100 °C yields the homoleptic, hexa coordinated, and sterically crowded complex [Mo(GaCp*)(6)] (1) in good yields ≥50%. Compound 1 exhibits an unusual and high coordinated octahedral [MoGa(6)] core. Similarly, [Rh(GaCp*)(5)][CF(3)SO(3)] (2) and [Rh(GaCp*)(5)][BAr(F)] (3) (BAr(F) = B{C(6)H(3)(CF(3))(2)}(4)) are prepared by the reaction of GaCp* with the rhodium(I) compound Rh(coe)(2)(CF(3)SO(3)) (coe = cyclooctene) and subsequent anion exchange in case of 3. Compound 2 features a trigonal bipyramidal [RhGa(5)] unit. In contrast, reaction of excess Ga(DDP) with Rh(coe)(2)(CF(3)SO(3)) does not result in a high coordinated homoleptic complex but instead yields [(coe)(toluene)Rh{Ga(DDP)}(CF(3)SO(3))] (4). The common feature of 2 and 4 in the solid state structure is the presence of short CF(3)SO(2)O···Ga contacts involving the GaCp* or rather the Ga(DDP) ligand. Compounds 1, 2, and 4 have been fully characterized by single crystal X-ray diffraction, variable temperature (1)H and (13)C NMR spectroscopy, IR spectroscopy, mass spectrometry, as well as elemental analysis.

摘要

研究了含烯烃的钼(0)和铑(I)起始原料与卡宾型 13 族金属配体 GaR(R = Cp*,DDP;Cp* = 五甲基环戊二烯基,DDP = HC(CMeNC(6)H(3)-2,6-(i)Pr(2))(2))的反应,并进行了比较。在 100°C 下,氢气氛围中用 GaCp处理[Mo(η(4)-丁二烯)(3)],以高产率(≥50%)得到了具有同核、六配位和空间拥挤的复合物[Mo(GaCp)(6)](1)。化合物 1 表现出不寻常的和高配位的八面体[MoGa(6)]核。类似地,通过 GaCp与铑(I)化合物Rh(coe)(2)(CF(3)SO(3))(coe = 环辛烯)的反应,以及随后在 3 的情况下进行阴离子交换,制备了[Rh(GaCp)(5)][CF(3)SO(3)](2)和[Rh(GaCp*)(5)][BAr(F)](3)(BAr(F) = B{C(6)H(3)(CF(3))(2)}(4))。化合物 2 具有三角双锥[RhGa(5)]单元。相比之下,过量的 Ga(DDP)与Rh(coe)(2)(CF(3)SO(3))反应不会导致高配位的同核复合物,而是生成[(coe)(甲苯)Rh{Ga(DDP)}(CF(3)SO(3))](4)。2 和 4 在固态结构中的共同特征是存在涉及 GaCp*或更确切地说 Ga(DDP)配体的短 CF(3)SO(2)O···Ga 接触。通过单晶 X 射线衍射、变温(1)H 和(13)C NMR 光谱、红外光谱、质谱以及元素分析,对 1、2 和 4 进行了全面的表征。

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