Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cádiz, Campus Río San Pedro, s/n, 11510 Puerto Real, Cádiz, Spain.
Microsc Microanal. 2011 Aug;17(4):578-81. doi: 10.1017/S1431927611000213. Epub 2011 May 27.
We show in this article that it is possible to obtain elemental compositional maps and profiles with atomic-column resolution across an InxGa1-xAs multilayer structure from 5th-order aberration-corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) images. The compositional profiles obtained from the analysis of HAADF-STEM images describe accurately the distribution of In in the studied multilayer in good agreement with Muraki's segregation model [Muraki, K., Fukatsu, S., Shiraki, Y. & Ito, R. (1992). Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantums wells. Appl Phys Lett 61, 557-559].
我们在本文中表明，通过 5 阶像差校正高角环形暗场扫描透射电子显微镜（HAADF-STEM）图像，可以获得具有原子列分辨率的 InxGa1-xAs 多层结构的元素组成映射和剖面。从 HAADF-STEM 图像分析获得的组成剖面准确地描述了研究中的多层中 In 的分布，与 Muraki 的偏析模型[Muraki, K., Fukatsu, S., Shiraki, Y. & Ito, R. (1992). 分子束外延过程中 In 原子的表面偏析及其对 InGaAs/GaAs 量子阱中能级的影响。Appl Phys Lett 61, 557-559]一致。
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