Clarendon Laboratory, Oxford University Department of Physics, Oxford, UK.
J Phys Condens Matter. 2011 Jun 22;23(24):242201. doi: 10.1088/0953-8984/23/24/242201. Epub 2011 Jun 1.
We have observed an electronic energy level crossing in a molecular nanomagnet (MNM) using muon spin relaxation. This effect, not observed previously despite several muon studies of MNM systems, provides further evidence that the spin relaxation of the implanted muon is sensitive to the dynamics of the electronic spin. Our measurements on a broken ring MNM [H(2)N(t)Bu(is)Pr][Cr(8)CdF(9)(O(2)CC(CH(3))(3))(18)], which contains eight Cr ions, show clear evidence for the S = 0 --> S = 1 transition that takes place at B(c) = 2.3 T. The crossing is observed as a resonance-like dip in the average positron asymmetry and also in the muon spin relaxation rate, which shows a sharp increase in magnitude at the transition and a peak centred within the S = 1 regime.
我们使用μ 子自旋弛豫观察到了分子纳米磁体（MNM）中的一个电子能级交叉。尽管先前对 MNM 系统进行了几次μ 子研究，但仍未观察到这种效应，这进一步证明了植入μ 子的自旋弛豫对电子自旋动力学敏感。我们对一个断环 MNM[H(2)N(t)Bu(is)Pr][Cr(8)CdF(9)(O(2)CC(CH(3))(3))(18)]的测量结果表明，其中包含八个 Cr 离子，在 B(c) = 2.3 T 时发生了 S = 0 --> S = 1 跃迁，这是明确的证据。交叉表现为平均正电子不对称性中的共振样下降，也表现为μ 子自旋弛豫率的急剧增加，在跃迁处的幅度急剧增加，并在 S = 1 区域内出现峰值。
