勘误：“硅纳米线生化场效应晶体管中1∕f噪声机制的温度依赖性” [《应用物理快报》97, 243501 (2010)]。
Erratum: "Temperature dependence of 1∕f noise mechanisms in silicon nanowire biochemical field effect transistors" [Appl. Phys. Lett. 97, 243501 (2010)].
作者信息
Rajan Nitin K, Routenberg David A, Chen Jin, Reed Mark A
出版信息
Appl Phys Lett. 2011 May 9;98(19):199902. doi: 10.1063/1.3590274. Epub 2011 May 12.
Abstract
[This corrects the article on p. 243501 in vol. 97, PMID: 21221250.][This corrects the article on p. 243501 in vol. 97, PMID: 21221250.].
摘要
[这更正了第97卷第243501页上的文章， PMID: 21221250。][这更正了第97卷第243501页上的文章， PMID: 21221250。]
相似文献
1
Erratum: "Temperature dependence of 1∕f noise mechanisms in silicon nanowire biochemical field effect transistors" [Appl. Phys. Lett. 97, 243501 (2010)].勘误：“硅纳米线生化场效应晶体管中1∕f噪声机制的温度依赖性” [《应用物理快报》97, 243501 (2010)]。
Appl Phys Lett. 2011 May 9;98(19):199902. doi: 10.1063/1.3590274. Epub 2011 May 12.
2
Temperature dependence of 1∕f noise mechanisms in silicon nanowire biochemical field effect transistors.硅纳米线生化场效应晶体管中1∕f噪声机制的温度依赖性
Appl Phys Lett. 2010 Dec 13;97(24):243501. doi: 10.1063/1.3526382. Epub 2010 Dec 14.
3
Erratum: "Kinase detection with gallium nitride based high electron mobility transistors" [Appl. Phys. Lett. , 013701 (2013)].勘误：“基于氮化镓的高电子迁移率晶体管的激酶检测”[《应用物理快报》，013701(2013)]。
Appl Phys Lett. 2013 Aug 19;103(8):89902. doi: 10.1063/1.4819200. Epub 2013 Aug 23.
4
Erratum: "Silicon electronics on silk as a path to bioresorbable, implantable devices" [Appl. Phys. Lett. 95, 133701 (2009)].勘误：“丝绸上的硅电子学作为通往生物可吸收、可植入设备的途径”[《应用物理快报》95, 133701 (2009)]。
Appl Phys Lett. 2009 Dec 28;95(26):269902. doi: 10.1063/1.3274132. Epub 2009 Dec 31.
5
ERRATUM.勘误
Int J Bioprint. 2020 Sep 17;6(4):309. doi: 10.18063/ijb.v6i4.309. eCollection 2020.
6
Erratum: "A complete set of material properties of single domain 0.26Pb(In(12)Nb(12))O(3)-0.46Pb(Mg(13)Nb(23))O(3)-0.28PbTiO(3) single crystals" [Appl. Phys. Lett. 96, 012907 (2010)].勘误：“单畴0.26Pb(In(12)Nb(12))O(3)-0.46Pb(Mg(13)Nb(23))O(3)-0.28PbTiO(3)单晶的完整材料特性集” [《应用物理快报》96, 012907 (2010)] 。
Appl Phys Lett. 2010 Jul 5;97(1):19901. doi: 10.1063/1.3459974. Epub 2010 Jul 7.
7
Corrigendum.勘误
Paediatr Child Health. 2015 Nov-Dec;20(8):466-7. doi: 10.1093/pch/20.8.466.
8
Erratum: "Magnetic nanoparticles with high specific absorption rate of electromagnetic energy at low field strength for hyperthermia therapy" [J. Appl. Phys. , 094302 (2015)].勘误：“用于热疗的在低场强下具有高电磁能量比吸收率的磁性纳米颗粒”[《应用物理杂志》，094302(2015)]。
J Appl Phys. 2015 Nov 7;118(17):179901. doi: 10.1063/1.4935331. Epub 2015 Nov 3.
9
Erratum: Self-Diffusion in Amorphous Silicon [Phys. Rev. Lett. 116, 025901 (2016)].勘误：非晶硅中的自扩散[物理评论快报 116, 025901 (2016)]。
Phys Rev Lett. 2016 Feb 26;116(8):089903. doi: 10.1103/PhysRevLett.116.089903. Epub 2016 Feb 23.
10
Erratum: Refractive Index of Silicon at γ Ray Energies [Phys. Rev. Lett. 108, 184802 (2012)].勘误：γ射线能量下硅的折射率[《物理评论快报》108, 184802 (2012)]。
Phys Rev Lett. 2017 Apr 21;118(16):169904. doi: 10.1103/PhysRevLett.118.169904. Epub 2017 Apr 18.
Zotero 插件