Division of Materials Chemistry, Faculty of Engineering, Hokkaido University, Sapporo, Hokkaido 060-8628, Japan.
ACS Appl Mater Interfaces. 2011 Jul;3(7):2665-70. doi: 10.1021/am200460c. Epub 2011 Jun 20.
Anodic oxide films with nanocrystalline tetragonal ZrO(2) precipitated in an amorphous oxide matrix were formed on Zr-Si and Zr-Al alloys and had significantly enhanced capacitance in comparison with those formed on zirconium metal. The capacitance enhancement was associated with the formation of a high-temperature stable tetragonal ZrO(2) phase with high relative permittivity as well as increased ionic resistivity, which reduces the thickness of anodic oxide films at a certain formation voltage. However, there is a general empirical trend that single-phase materials with higher permittivity have lower ionic resistivity. This study presents a novel material design based on a nanocrystalline-amorphous composite anodic oxide film for capacitor applications.
在 Zr-Si 和 Zr-Al 合金上形成了具有纳米晶四方 ZrO(2)析出相的非晶态氧化膜，与在锆金属上形成的氧化膜相比，其电容性能显著增强。电容增强与高温稳定四方 ZrO(2)相的形成有关，这种相具有较高的介电常数和增加的离子电阻率，从而在一定的形成电压下降低了阳极氧化膜的厚度。然而，一般经验趋势是具有较高介电常数的单相材料具有较低的离子电阻率。本研究提出了一种基于纳米晶-非晶复合阳极氧化膜的电容器应用的新型材料设计。
