Micro- and Trace Analysis Center, Department of Chemistry, University of Antwerp (UIA), B-2610 Antwerpen, Belgium, and Institute for Materials Research, Tohoku University, Katahira-2-1-1, Aoba, Sendai, 980-8577 Japan.
Anal Chem. 1999 Jul 1;71(13):2497-501. doi: 10.1021/ac990075p.
We developed a new method of grazing exit electron probe microanalysis (GE-EPMA) and applied it to analyze both Si surfaces and Mg-salt particles. In conventional EPMA, X-rays are detected at an exit (takeoff) angle of approximately 45°. Therefore, when particles collected on a sample carrier are analyzed by EPMA, the X-rays from both the particles and the carrier are detected, although we need only the X-rays emitted from the particle itself. In contrast to this, the X-rays are detected at grazing exit angles in GE-EPMA. The X-rays emitted from deep inside of the sample are not detected under grazing exit conditions, and only X-rays emitted from the surface and the particle are measured. It was found that surface-sensitive analysis of a Si wafer was possible with low background at grazing exit angles. The intensity ratio of O Kα to Si Kα increased near zero degrees, indicating that the Si wafer is covered with a native Si oxide. Moreover, Mg Kα X-rays from a Mg-salt particle, which was deposited on the Si wafer, were detected with a small Si Kα intensity at grazing exit angles of less than 0.5°. By decreasing the exit angle to less than zero, only the top of the particle was observed; therefore, GE-EPMA measurement would make it possible to investigate the surface layer of one particle.
我们开发了一种新的掠出式电子探针微分析(GE-EPMA)方法,并将其应用于分析硅表面和镁盐颗粒。在传统的 EPMA 中,X 射线在大约 45°的出射(起飞)角处被检测到。因此,当用 EPMA 分析收集在样品载体上的颗粒时,会同时检测到来自颗粒和载体的 X 射线,尽管我们只需要来自颗粒本身的 X 射线。与此相反,在 GE-EPMA 中,X 射线在掠出射角度下被检测到。在掠出射条件下,不会检测到来自样品深处的 X 射线,而只测量来自表面和颗粒的 X 射线。研究发现,在掠出射角度下可以进行 Si 片的表面敏感分析,并且背景较低。O Kα与 Si Kα的强度比在接近零度时增加,表明 Si 片表面覆盖有天然 Si 氧化物。此外,沉积在 Si 片上的 Mg 盐颗粒的 Mg Kα X 射线在小于 0.5°的掠出射角度下也可以被检测到,同时 Si Kα强度较小。通过将出射角减小到小于零度,可以只观察到颗粒的顶部;因此,GE-EPMA 测量将有可能研究单个颗粒的表面层。