School of Chemical and Biomolecular Engineering, Cornell University, Ithaca, New York 14853, USA.
J Chem Phys. 2011 Jun 14;134(22):224702. doi: 10.1063/1.3591965.
We have examined the initial stages of growth of a crystalline small molecule organic thin film, diindenoperylene (DIP), on SiO(2) surfaces terminated with a series of self-assembled monolayers (SAMs). In this study we make use of supersonic molecular beam techniques to vary the incident kinetic energy of the DIP molecules, and we use in situ, real time synchrotron x-ray scattering to monitor the buildup of each molecular layer in the growing thin film. We find that the effects of the SAMs are most apparent concerning growth in the sub-monolayer regime, before the substrate is entirely covered by the DIP thin film. In this coverage regime on bare SiO(2), and SiO(2) terminated with either hexamethyldisilazane or perflurooctyltrichlorosilane the adsorption dynamics are consistent with trapping-mediated adsorption as observed in more simple systems, where the probability of adsorption decreases significantly with increasing kinetic energy. Once these surfaces are covered with DIP, however, the adsorption probability increases, particularly at the highest incident kinetic energy, and the probability of adsorption exhibits only a weak dependence on the incident kinetic energy. In contrast, on surfaces terminated by octyl- (OTS) and octadecyltrichlorosilane (ODTS) the trapping probability is high and exhibits little dependence on the incident kinetic energy, essentially the same as what is observed on these same surfaces covered by DIP. We postulate, which is backed by the results of molecular dynamics simulations, that direct molecular insertion into the OTS and ODTS layers is a primary explanation for efficient trapping on these surfaces.
我们研究了小分子有机晶体二并苯并戊二烯(DIP)在一系列自组装单层(SAM)终止的 SiO2 表面上的初始生长阶段。在这项研究中,我们利用超声分子束技术来改变 DIP 分子的入射动能,并利用原位、实时同步辐射 X 射线散射来监测生长薄膜中每个分子层的堆积。我们发现,在 DIP 薄膜完全覆盖基底之前,SAM 的影响在亚单层生长阶段最为明显。在裸露的 SiO2 上以及用六甲基二硅氮烷或全氟辛基三氯硅烷终止的 SiO2 上,吸附动力学与在更简单的系统中观察到的捕获介导吸附一致,其中吸附的概率随着动能的增加而显著降低。然而,一旦这些表面被 DIP 覆盖,吸附的概率增加,特别是在最高入射动能下,吸附的概率仅表现出对入射动能的微弱依赖性。相比之下,在被辛基(OTS)和十八烷基三氯硅烷(ODTS)终止的表面上,捕获概率较高,并且几乎不依赖于入射动能,这与 DIP 覆盖的相同表面上观察到的情况相同。我们假设,这得到了分子动力学模拟结果的支持,即直接分子插入 OTS 和 ODTS 层是这些表面上高效捕获的主要原因。