环形光子晶体硅-绝缘体非对称平板中的增强带隙。

Enhanced bandgap in annular photonic-crystal silicon-on-insulator asymmetric slabs.

机构信息

School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA.

出版信息

Opt Lett. 2011 Jun 15;36(12):2263-5. doi: 10.1364/OL.36.002263.

DOI:10.1364/OL.36.002263

Abstract

Photonic band structures of annular photonic-crystal (APC) silicon-on-insulator (SOI) asymmetric slabs with finite thickness were investigated by the three-dimensional plane-wave expansion method. The results show that for a broad range of air-volume filling factors, APC slabs can exhibit a significantly larger bandgap than conventional circular-hole photonic-crystal (PC) slabs. Bandgap enhancements over conventional air hole PC SOI slabs as large as twofold are predicted for low air-volume filling factors below 15%. This desirable behavior suggests a potential for APC SOI slabs to serve as the basis of various optical cavities, waveguides, and mirrors.

摘要

采用三维平面波展开法研究了有限厚度环形光子晶体（APC）硅-绝缘体（SOI）非对称平板的光子带结构。结果表明，在较宽的空气体积填充因子范围内，APC 平板比传统的圆形孔光子晶体（PC）平板表现出更大的带隙。对于低于 15%的低空气体积填充因子，预测 APC 平板相对于传统空气孔 PC SOI 平板的带隙增强高达两倍。这种理想的行为表明 APC SOI 平板有可能成为各种光学腔、波导和反射镜的基础。