Key Lab of Materials Modification (Dalian University of Technology), Ministry of Education, Dalian 116024, China.
Spectrochim Acta A Mol Biomol Spectrosc. 2011 Sep;79(5):1896-903. doi: 10.1016/j.saa.2011.05.083. Epub 2011 Jun 1.
In this study, a bi-directional high voltage pulse with 20 ns rising time is employed to generate diffuse glow-like dielectric barrier discharge plasma with very low gas temperature in N2 using needle-plate electrode configuration at atmospheric pressure. Both the diffuse nanosecond pulsed dielectric barrier discharge images and the optical emission spectra of the discharge are recorded successfully under severe electromagnetic interference. The effects of pulse peak voltage, pulse repetition rate, and the concentrations of Ar and O2 on the emission intensities of NO (A2Σ→X2Π), OH (A2Σ→X2Π, 0-0), N2 (C3Πu→B3Πg, 0-0, 337.1 nm), and N2+ (B2Σu+→X2Σg+, 0-0, 391.4 nm) are investigated. The effects of the concentrations of Ar and O2 on the discharge diffuse performance are also studied. It is found that the emission intensities of NO (A2Σ→X2Π), OH (A2Σ→X2Π, 0-0), N2 (C3Πu→B3Πg, 0-0, 337.1 nm), and N2+ (B2Σu+→X2Σg+, 0-0, 391.4 nm) rise with increasing pulse peak voltage, pulse repetition rate, and the concentration of Ar, but decrease with increasing the concentration of O2. The main physicochemical processes involved are also discussed.
在这项研究中，采用上升时间为 20ns 的双向高压脉冲，在大气压下使用针板电极结构，在氮气中产生低温的弥散辉光介质阻挡放电等离子体。在严重的电磁干扰下，成功记录了弥散纳秒脉冲介质阻挡放电的图像和放电的光谱发射。研究了脉冲峰值电压、脉冲重复率以及 Ar 和 O2 的浓度对 NO（A2Σ→X2Π）、OH（A2Σ→X2Π、0-0）、N2（C3Πu→B3Πg、0-0、337.1nm）和 N2+（B2Σu+→X2Σg+、0-0、391.4nm）发射强度的影响。还研究了 Ar 和 O2 的浓度对放电弥散性能的影响。结果表明，NO（A2Σ→X2Π）、OH（A2Σ→X2Π、0-0）、N2（C3Πu→B3Πg、0-0、337.1nm）和 N2+（B2Σu+→X2Σg+、0-0、391.4nm）的发射强度随脉冲峰值电压、脉冲重复率和 Ar 浓度的增加而增加，但随 O2 浓度的增加而减小。还讨论了涉及的主要物理化学过程。
