Milekhin A G, Meijers R J, Richter T, Calarco R, Montanari S, Lüth H, Paez Sierra B A, Zahn D R T
Institute of Semiconductor Physics, 630090, Novosibirsk, Russia.
J Phys Condens Matter. 2006 Jul 5;18(26):5825-34. doi: 10.1088/0953-8984/18/26/003. Epub 2006 Jun 16.
GaN nanocolumnar structures were grown by plasma-assisted molecular beam epitaxy (PAMBE) and also fabricated by electron cyclotron resonance reactive ion etching (ECR-RIE) of a compact GaN film parallel to the [111] direction of the Si(111) substrates. Scanning electron microscopy shows that the nanocolumns fabricated by PAMBE have a length of about 300-500 nm with diameters ranging from 20 to 150 nm while nanowhiskers formed by RIE have diameters of 40-80 nm and a height between 1.4 and 1.7 µm. A comparative study of the vibrational spectrum (including optical and interface phonons) of the nanostructures using conventional macro-Raman and micro-Raman scattering as well as surface-enhanced Raman scattering is presented.
通过等离子体辅助分子束外延（PAMBE）生长GaN纳米柱状结构，并通过对平行于Si(111)衬底[111]方向的致密GaN薄膜进行电子回旋共振反应离子刻蚀（ECR-RIE）来制备。扫描电子显微镜显示，通过PAMBE制备的纳米柱长度约为300 - 500 nm，直径范围为20至150 nm，而通过RIE形成的纳米晶须直径为40 - 80 nm，高度在1.4至1.7 µm之间。本文展示了使用传统宏观拉曼和微观拉曼散射以及表面增强拉曼散射对纳米结构的振动光谱（包括光学声子和界面声子）进行的对比研究。
