Wan Zhenyu, Huang Shujuan, Green Martin A, Conibeer Gavin
ARC Photovoltaics Centre of Excellence, University of New South Wales (UNSW), Sydney, Australia.
Nanoscale Res Lett. 2011 Feb 10;6(1):129. doi: 10.1186/1556-276X-6-129.
In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system. Amorphous Si-rich SiC layer has been deposited by co-sputtering in different Si concentrations (50 to approximately 80 v%). Si nanocrystals (Si-NC) containing different grain sizes have been fabricated within the SiC matrix under two different annealing conditions: furnace annealing and RTA both at 1,100°C. HRTEM image clearly reveals both Si and SiC-NC formed in the films. Much better "degree of crystallization" of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation. Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.
本文研究了快速热退火（RTA）技术对碳化硅（SiC）基体系统中硅纳米晶体的积极作用，并将其与传统炉式退火进行了比较。通过共溅射在不同硅浓度（50至约80体积%）下沉积了富非晶硅的SiC层。在两种不同的退火条件下，即在1100°C的炉式退火和RTA条件下，在SiC基体内制备了具有不同晶粒尺寸的硅纳米晶体（Si-NC）。高分辨率透射电子显微镜（HRTEM）图像清楚地显示了薄膜中形成的Si和SiC-NC。从掠入射X射线衍射（GIXRD）和拉曼分析的研究中可以看出，与炉式退火相比，RTA能够实现更好的Si-NC“结晶度”，尤其是在高硅浓度情况下。基于实验结果讨论了两种退火工艺的差异以及结晶机理。
