Dos Santos Osmar Fp, Rodrigues Sara Cp, Sipahi Guilherme M, Scolfaro Luísa Mr, da Silva Eronides F
Departamento de Física, Universidade Federal Rural de Pernambuco, R, Dom Manoel de Medeiros s/n, 52171-900 Recife, PE, Brazil.
Nanoscale Res Lett. 2011 Feb 25;6(1):175. doi: 10.1186/1556-276X-6-175.
The electrical conductivity σ has been calculated for p-doped GaAs/Al0.3Ga0.7As and cubic GaN/Al0.3Ga0.7N thin superlattices (SLs). The calculations are done within a self-consistent approach to the k→⋅p→ theory by means of a full six-band Luttinger-Kohn Hamiltonian, together with the Poisson equation in a plane wave representation, including exchange correlation effects within the local density approximation. It was also assumed that transport in the SL occurs through extended minibands states for each carrier, and the conductivity is calculated at zero temperature and in low-field ohmic limits by the quasi-chemical Boltzmann kinetic equation. It was shown that the particular minibands structure of the p-doped SLs leads to a plateau-like behavior in the conductivity as a function of the donor concentration and/or the Fermi level energy. In addition, it is shown that the Coulomb and exchange-correlation effects play an important role in these systems, since they determine the bending potential.
已针对p型掺杂的GaAs/Al0.3Ga0.7As和立方GaN/Al0.3Ga0.7N薄超晶格（SLs）计算了电导率σ。计算是在k→⋅p→理论的自洽方法内进行的，借助完整的六带卢廷格 - 科恩哈密顿量，以及平面波表示中的泊松方程，包括局部密度近似内的交换关联效应。还假设超晶格中的输运通过每个载流子的扩展微带态发生，并且通过准化学玻尔兹曼动力学方程在零温度和低场欧姆极限下计算电导率。结果表明，p型掺杂超晶格的特定微带结构导致电导率随施主浓度和/或费米能级能量呈现类似平台的行为。此外，结果表明库仑和交换关联效应在这些系统中起重要作用，因为它们决定了弯曲势。
