Abe Kazutaka, Miura Yoshio, Shiozawa Yasunori, Shirai Masafumi
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan.
J Phys Condens Matter. 2009 Feb 11;21(6):064244. doi: 10.1088/0953-8984/21/6/064244. Epub 2009 Jan 20.
The interface between the half-Heusler alloy CoFeSi and Si is investigated by using first-principles density-functional calculations. Although CoFeSi has not been fabricated yet, its formation energy turns out to be negative. Within the generalized gradient approximation, CoFeSi shows nearly half-metallic properties, and its lattice constant is about 5.38 Å; this value is relatively close to the lattice constant of Si. We here chiefly investigate the CoFeSi/Si (110) interface, and find that the half-metallic properties are almost preserved at a specific (110) interface. Furthermore, the interfacial structure which leads to the high spin polarization has the lowest energy of the (110) interfacial patterns examined in this work. The half-metallicity at the interfaces is similarly observed in the densities of states projected onto delocalized sp states, and this suggests the relevance of the high spin polarization to transport properties.
通过第一性原理密度泛函计算研究了半赫斯勒合金CoFeSi与Si之间的界面。尽管CoFeSi尚未制备出来,但其形成能为负。在广义梯度近似下,CoFeSi表现出近半金属性质,其晶格常数约为5.38 Å;该值与Si的晶格常数相对接近。我们在此主要研究CoFeSi/Si(110)界面,发现在特定的(110)界面处半金属性质几乎得以保留。此外,导致高自旋极化的界面结构在所研究的(110)界面模式中能量最低。在投影到离域sp态上的态密度中也类似地观察到了界面处的半金属性,这表明高自旋极化与输运性质相关。