Nassiopoulou A G, Gianneta V V, Huffman M, Reading M A, Van Den Berg J A, Tsiaoussis I, Frangis N
IMEL/NCSR Demokritos, 153 10 Athens, Greece.
Nanotechnology. 2008 Dec 10;19(49):495605. doi: 10.1088/0957-4484/19/49/495605. Epub 2008 Nov 19.
Highly dense hexagonally ordered two-dimensional arrays of Si nanocrystals embedded in SiO(2) nanodots were fabricated on a silicon substrate by using a self-assembled porous anodic alumina thin film as a masking layer through which electrochemical oxidation of the Si substrate and ultralow energy Si implantation took place. After removal of the alumina film and high temperature annealing of the samples, hexagonally ordered Si nanocrystals embedded within SiO(2) nanodots were obtained, having sizes in the few tens of nanometer range. The fabricated ordered structures show significant potential for applications either in basic physics experiments or as building blocks for nanoelectronic and nanophotonic devices.
通过使用自组装多孔阳极氧化铝薄膜作为掩膜层,在硅衬底上制造出了嵌入在SiO₂纳米点中的高度密集的六方有序二维硅纳米晶体阵列。通过该掩膜层对硅衬底进行电化学氧化和超低能量硅注入。去除氧化铝膜并对样品进行高温退火后,获得了嵌入在SiO₂纳米点内的六方有序硅纳米晶体,其尺寸在几十纳米范围内。所制造的有序结构在基础物理实验中或作为纳米电子和纳米光子器件的构建块都显示出巨大的应用潜力。