Chen Liang-Yi, Huang Hung-Hsun, Chang Chun-Hsiang, Huang Ying-Yuan, Wu Yuh-Renn, Huang JianJang
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 1, Roosevelt Road, Section 4, Taipei, 106, Taiwan.
Opt Express. 2011 Jul 4;19 Suppl 4:A900-7. doi: 10.1364/OE.19.00A900.
Strain in the semiconductor light emitting layers has profound effect on the energy band structure and the optical properties of the light emitting diodes (LEDs). Here, we report the fabrication and characterization of GaN nanorod LED arrays. We found that the choice of nanorod passivation materials results in the variation of strain in the InGaN/GaN quantum wells, and thus the corresponding change of light emission properties. The results were further investigated by performing Raman measurement to understand the strain of nanorods with different passivation materials and by calculating the optical transition energy of the devices under the influence of strain-induced deformation potential and the piezoelectric polarization field.
半导体发光层中的应变对发光二极管（LED）的能带结构和光学性质有深远影响。在此，我们报告了氮化镓纳米棒LED阵列的制备与表征。我们发现，纳米棒钝化材料的选择会导致铟镓氮/氮化镓量子阱中应变的变化，进而使发光特性发生相应改变。通过进行拉曼测量以了解不同钝化材料的纳米棒的应变，并通过计算在应变诱导的形变势和压电极化场影响下器件的光学跃迁能量，对结果进行了进一步研究。
