Lau Kei May, Wong Ka Ming, Zou Xinbo, Chen Peng
Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong.
Opt Express. 2011 Jul 4;19 Suppl 4:A956-61. doi: 10.1364/OE.19.00A956.
LEDs on Si offer excellent potential of low cost manufacturing for solid state lighting and display, taking advantage of the well-developed IC technologies of silicon. In this paper, we report how the performance of LEDs grown on Si can be improved. Multiple quantum well InGaN LED structure was grown on patterned silicon substrates and circular LEDs 160 µm in radius were processed. Fabricated LEDs were then transferred to an electroplated copper substrate with a reflective mirror inserted by a double-flip transfer process, to improve the light extraction efficiency and heat dissipation. The light output power of LEDs on copper increased by ~80% after the transfer. The operating current before the onset of light output power saturation also increased by 25% because of the good thermal conductivity of copper. The light output power of packaged LEDs on copper was 6.5 mW under 20 mA current injection and as high as 14 mW driven at 55 mA.
基于硅的发光二极管利用硅成熟的集成电路技术，在固态照明和显示领域具有低成本制造的巨大潜力。在本文中，我们报告了如何提高在硅上生长的发光二极管的性能。在图案化硅衬底上生长了多量子阱氮化铟镓发光二极管结构，并制作了半径为160微米的圆形发光二极管。然后通过双翻转转移工艺将制造好的发光二极管转移到插入了反射镜的电镀铜衬底上，以提高光提取效率和散热性能。转移后，铜衬底上发光二极管的光输出功率提高了约80%。由于铜具有良好的热导率，光输出功率饱和前的工作电流也增加了25%。在20毫安电流注入下，铜衬底上封装发光二极管的光输出功率为6.5毫瓦，在55毫安驱动下高达14毫瓦。
