Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper.

LEDs on Si offer excellent potential of low cost manufacturing for solid state lighting and display, taking advantage of the well-developed IC technologies of silicon. In this paper, we report how the performance of LEDs grown on Si can be improved. Multiple quantum well InGaN LED structure was grown on patterned silicon substrates and circular LEDs 160 µm in radius were processed. Fabricated LEDs were then transferred to an electroplated copper substrate with a reflective mirror inserted by a double-flip transfer process, to improve the light extraction efficiency and heat dissipation. The light output power of LEDs on copper increased by ~80% after the transfer. The operating current before the onset of light output power saturation also increased by 25% because of the good thermal conductivity of copper. The light output power of packaged LEDs on copper was 6.5 mW under 20 mA current injection and as high as 14 mW driven at 55 mA.