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声化学法在多壁碳纳米管中合成硒化亚锑

Sonochemical growth of antimony selenoiodide in multiwalled carbon nanotube.

机构信息

Solid State Physics Section, Institute of Physics, Silesian University of Technology, ul. Krasińskiego 8, 40-019 Katowice, Poland.

出版信息

Ultrason Sonochem. 2012 Jan;19(1):179-85. doi: 10.1016/j.ultsonch.2011.06.006. Epub 2011 Jun 25.

Abstract

This paper presents, for the first time, the nanocrystalline, semiconducting antimony selenoiodide (SbSeI) grown in multi-walled carbon nanotubes (CNTs). It was prepared sonochemically using elemental Sb, Se, and I in the presence of ethanol under ultrasonic irradiation (35 kHz, 2.6 W/cm2) at 323 K for 3 h. The CNTs filled with SbSeI were characterized by using techniques such as powder X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, high-resolution transmission electron microscopy, selected area electron diffraction, and optical diffuse reflection spectroscopy. These investigations exhibit that the SbSeI filling the CNTs is single crystalline in nature and in the form of nanowires. It has indirect allowed energy band gap EgIf=1.61(6) eV.

摘要

本文首次提出了在多壁碳纳米管(CNTs)中生长的纳米晶、半导体硒化锑碘(SbSeI)。它是通过在超声辐射(35 kHz,2.6 W/cm2)下,在 323 K 下用元素 Sb、Se 和 I 在乙醇存在下进行超声化学合成的,反应时间为 3 小时。使用粉末 X 射线衍射、扫描电子显微镜、能谱分析、高分辨率透射电子显微镜、选区电子衍射和光漫反射光谱等技术对填充 SbSeI 的 CNTs 进行了表征。这些研究表明,填充 CNTs 的 SbSeI 本质上是单晶的,呈纳米线形式。它具有间接允许的能带间隙 EgIf=1.61(6) eV。

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