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基于锥形放大器的高功率双波长外腔半导体激光器,具有可调谐太赫兹频差。

High-power dual-wavelength external-cavity diode laser based on tapered amplifier with tunable terahertz frequency difference.

机构信息

DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark, Frederiksborgvej 399, P.O. Box 49, Dk-4000 Roskilde, Denmark.

出版信息

Opt Lett. 2011 Jul 15;36(14):2626-8. doi: 10.1364/OL.36.002626.

DOI:10.1364/OL.36.002626
PMID:21765489
Abstract

Tunable dual-wavelength operation of a diode laser system based on a tapered diode amplifier with double-Littrow external-cavity feedback is demonstrated around 800 nm. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 5.0 THz. An output power of 1.54 W is achieved with a frequency difference of 0.86 THz, the output power is higher than 1.3 W in the 5.0 THz range of frequency difference, and the amplified spontaneous emission intensity is more than 20 dB suppressed in the range of frequency difference. To our knowledge, this is the highest output power from a dual-wavelength diode laser system operating with tunable terahertz frequency difference.

摘要

基于双拉曼外腔反馈的锥形二极管放大器的二极管激光系统可实现 800nm 附近的可调谐双波长运转。这两个波长可以单独调谐,两个波长的频率差可从 0.5 到 5.0THz 可调谐。当频率差为 0.86THz 时,获得了 1.54W 的输出功率,在 5.0THz 的频率差范围内,输出功率高于 1.3W,并且在频率差范围内,放大的自发发射强度被抑制超过 20dB。据我们所知,这是具有可调谐太赫兹频率差的双波长二极管激光系统的最高输出功率。

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