Murata Junji, Shirasawa Yuki, Sano Yasuhisa, Sadakuni Shun, Yagi Keita, Okamoto Takeshi, Hattori Azusa N, Arima Kenta, Yamauchi Kazuto
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan.
J Nanosci Nanotechnol. 2011 Apr;11(4):2882-5. doi: 10.1166/jnn.2011.3918.
The optical and electrical properties of GaN(0001) surfaces treated by a novel chemical polishing method are described. Scanning microscopic photoluminescence images reveal that the polished GaN surface shows improved luminescence properties compared to the untreated surface. Current-voltage measurements of Schottky barriers formed using the GaN substrates show that the polished GaN surface has a lower reverse leakage current, and that the barrier height and ideality factor are improved after the polishing treatment.
描述了采用新型化学抛光方法处理的GaN(0001)表面的光学和电学性质。扫描显微镜光致发光图像显示，与未处理的表面相比，抛光后的GaN表面发光性能得到改善。对使用GaN衬底形成的肖特基势垒进行的电流-电压测量表明，抛光后的GaN表面具有较低的反向漏电流，并且在抛光处理后势垒高度和理想因子得到改善。
