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等离子体聚合聚苯胺/TiO₂异质结构二极管的电学和结构表征:单TiO₂薄膜电极与双层TiO₂薄膜电极的对比研究

Electrical and structural characterization of plasma polymerized polyaniline/TiO2 heterostructure diode: a comparative study of single and bilayer TiO2 thin film electrode.

作者信息

Ameen Sadia, Akhtar M Shaheer, Kimi Young Soon, Yang O-Bong, Shin Hyung-Shik

机构信息

Energy Materials and Surface Science Laboratory, Solar Energy Research Center School of Chemical Engineering, Chonbuk National University, Jeonju 561-756, Republic of Korea.

出版信息

J Nanosci Nanotechnol. 2011 Apr;11(4):3306-13. doi: 10.1166/jnn.2011.3747.

DOI:10.1166/jnn.2011.3747
PMID:21776701
Abstract

A heterostructure was fabricated using p-type plasma polymerized polyaniline (PANI) and n-type (single and bilayer) titanium dioxide (TiO2) thin film on FTO glass. The deposition of single and bilayer TiO2 thin film on FTO substrate was achieved through doctor blade followed by dip coating technique before subjected to plasma enhanced polymerization. To fabricate p-n heterostructure, a plasma polymerization of aniline was conducted using RF plasma at 13.5 MHz and at the power of 120 W on the single and bilayer TiO2 thin film electrodes. The morphological, optical and the structural characterizations revealed the formation of p-n heterostructures between PANI and TiO2 thin film. The PANI/bilayer TiO2 heterostructure showed the improved current-voltage (I-V) characteristics due to the substantial deposition of PANI molecules into the bilayer TiO2 thin film which provided good conducting pathway and reduced the degree of excitons recombination. The change of linear I-V behavior of PANI/TiO2 heterostructure to non linear behavior with top Pt contact layer confirmed the formation of Schottky contact at the interfaces of Pt layer and PANI/TiO2 thin film layers.

摘要

在FTO玻璃上使用p型等离子体聚合聚苯胺(PANI)和n型(单层和双层)二氧化钛(TiO₂)薄膜制备了一种异质结构。通过刮刀法在FTO基板上沉积单层和双层TiO₂薄膜,然后在进行等离子体增强聚合之前采用浸涂技术。为了制备p-n异质结构,在单层和双层TiO₂薄膜电极上使用13.5 MHz的射频等离子体和120 W的功率进行苯胺的等离子体聚合。形态、光学和结构表征揭示了PANI和TiO₂薄膜之间形成了p-n异质结构。PANI/双层TiO₂异质结构由于PANI分子大量沉积到双层TiO₂薄膜中,提供了良好的导电通路并降低了激子复合程度,从而表现出改善的电流-电压(I-V)特性。PANI/TiO₂异质结构的线性I-V行为随着顶部Pt接触层变为非线性行为,证实了在Pt层与PANI/TiO₂薄膜层的界面处形成了肖特基接触。

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