Aharonov-casher 效应在 Bi2Se3 方环干涉仪中的应用。

Aharonov-casher effect in Bi2Se3 square-ring interferometers.

机构信息

Daniel Chee Tsui Laboratory, Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China.

出版信息

Phys Rev Lett. 2011 Jul 1;107(1):016802. doi: 10.1103/PhysRevLett.107.016802. Epub 2011 Jun 30.

DOI:10.1103/PhysRevLett.107.016802

Abstract

Electrical control of spin dynamics in Bi(2)Se(3) was investigated in ring-type interferometers. Aharonov-Bohm and Altshuler-Aronov-Spivak resistance oscillations against a magnetic field, and Aharonov-Casher resistance oscillations against the gate voltage were observed in the presence of a Berry phase of π. A very large tunability of spin precession angle by the gate voltage has been obtained, indicating that Bi(2)Se(3)-related materials with strong spin-orbit coupling are promising candidates for constructing novel spintronic devices.

摘要

在环形干涉仪中研究了 Bi(2)Se(3)中自旋动力学的电控制。在存在π Berry 相的情况下，观察到了磁场中的 Aharonov-Bohm 和 Altshuler-Aronov-Spivak 电阻振荡，以及栅极电压下的 Aharonov-Casher 电阻振荡。通过栅极电压对自旋进动角进行了非常大的可调谐性，表明具有强自旋轨道耦合的 Bi(2)Se(3)相关材料是构建新型自旋电子器件的有前途的候选材料。