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单晶 Bi2Te3 纳米线中的一维弱反局域

One-dimensional weak antilocalization in single-crystal Bi2Te3 nanowires.

机构信息

High Magnetic Field Laboratory, Chinese Academy of Science, Hefei 230031, Anhui, P. R. China.

出版信息

Sci Rep. 2013;3:1564. doi: 10.1038/srep01564.

DOI:10.1038/srep01564
PMID:23535588
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3610095/
Abstract

Angle-dependent magnetoconductance was measured on an individual surface-curved Bi2Te3 single-crystal nanowire fabricated by electrochemical deposition, where the evolution of surface conduction with wire diameters was investigated. It was found that the magnetoconductance of these nanowires in low field regime can be well described by one-dimensional (1D) weak antilocalization (WAL) model, where the dephasing length of the electrons follows T(-1/3) dependence but insensitive to the wire diameter. Meanwhile, such a 1D surface WAL was found to be enhanced significantly with the decrease of the wire diameter.

摘要

角度相关磁导率在通过电化学沉积制备的单个表面弯曲 Bi2Te3 单晶纳米线上进行了测量，其中研究了表面传导随线材直径的变化。结果发现，这些纳米线在低场条件下的磁导率可以很好地用一维（1D）弱反局域（WAL）模型来描述，其中电子的退相位长度遵循 T(-1/3)的依赖关系，但与线材直径无关。同时，随着线材直径的减小，这种一维表面 WAL 明显增强。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/319a/3610095/19bf26873b99/srep01564-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/319a/3610095/dff2ba2b7164/srep01564-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/319a/3610095/d32a36e22d69/srep01564-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/319a/3610095/b33fde6d384a/srep01564-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/319a/3610095/19bf26873b99/srep01564-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/319a/3610095/dff2ba2b7164/srep01564-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/319a/3610095/d32a36e22d69/srep01564-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/319a/3610095/b33fde6d384a/srep01564-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/319a/3610095/19bf26873b99/srep01564-f4.jpg

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