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铜基透明导电氧化物中的化学键:CuMO2(M=In、Ga、Sc)。

Chemical bonding in copper-based transparent conducting oxides: CuMO2 (M = In, Ga, Sc).

机构信息

School of Chemistry and CRANN, Trinity College Dublin, Dublin 2, Ireland.

出版信息

J Phys Condens Matter. 2011 Aug 24;23(33):334201. doi: 10.1088/0953-8984/23/33/334201. Epub 2011 Aug 3.

Abstract

The geometry and electronic structure of copper-based p-type delafossite transparent conducting oxides, CuMO(2) (M = In, Ga, Sc), are studied using the generalized gradient approximation (GGA) corrected for on-site Coulomb interactions (GGA + U). The bonding and valence band compositions of these materials are investigated, and the origins of changes in the valence band features between group 3 and group 13 cations are discussed. Analysis of the effective masses at the valence and conduction band edge explains the experimentally reported conductivity trends.

摘要

采用考虑局域库仑相互作用的广义梯度近似(GGA)方法(GGA + U)研究了基于铜的 p 型铜铁矿透明导电氧化物 CuMO2(M=In,Ga,Sc)的几何形状和电子结构。研究了这些材料的键合和价带组成,并讨论了 3 族和 13 族阳离子之间价带特征变化的起源。价带和导带边缘的有效质量分析解释了实验报道的电导率趋势。

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