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在涂覆有硅和铝的硅衬底上制备的铁硅催化剂上碳纳米管的生长。

Growth of CNTs on Fe-Si catalyst prepared on Si and Al coated Si substrates.

作者信息

Teng F-Y, Ting Jyh-Ming, Sharma Sahendra P, Liao Kun-Hou

机构信息

Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan.

出版信息

Nanotechnology. 2008 Mar 5;19(9):095607. doi: 10.1088/0957-4484/19/9/095607. Epub 2008 Feb 12.

Abstract

In this paper we report the effect of Al interlayers on the growth characteristics of carbon nanotubes (CNTs) using as-deposited and plasma etched Fe-Si catalyst films as the catalysts. Al interlayers having various thicknesses ranging from 2 to 42 nm were deposited on Si substrates prior to the deposition of Fe-Si catalysts. It was found that the Al interlayer diffuses into the Fe-Si catalyst during the plasma etching prior to the CNT growth, leading to the swelling and amorphization of the catalyst. This allows enhanced carbon diffusion in the catalyst and therefore a faster growth rate of the resulting CNTs. It was also found that use of an Al interlayer having a thickness of ∼3 ± 1 nm is most effective. Due to the effectiveness of this, the normally required catalyst etching is no longer needed for the growth of CNTs.

摘要

在本文中,我们报道了使用沉积态和等离子体蚀刻的Fe-Si催化剂薄膜作为催化剂时,Al中间层对碳纳米管(CNT)生长特性的影响。在沉积Fe-Si催化剂之前,将厚度范围为2至42nm的各种Al中间层沉积在Si衬底上。发现在CNT生长之前的等离子体蚀刻过程中,Al中间层扩散到Fe-Si催化剂中,导致催化剂膨胀和非晶化。这使得碳在催化剂中的扩散增强,从而使所得CNT的生长速率更快。还发现使用厚度约为3±1nm的Al中间层最为有效。由于其有效性,CNT生长通常所需的催化剂蚀刻不再必要。

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