Tanamoto T, Nishi Y, Fujita S
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan.
J Phys Condens Matter. 2009 Apr 8;21(14):145501. doi: 10.1088/0953-8984/21/14/145501. Epub 2009 Mar 9.
We theoretically compare transport properties of the Fano-Kondo effect with those of the Fano effect, focusing on the effect of a two-level state in a triple quantum dot (QD) system. We analyze shot noise characteristics in the Fano-Kondo region at zero temperature, and discuss the effect of strong electronic correlation in QDs. We found that the modulation of the Fano dip is strongly affected by the on-site Coulomb interaction in QDs, and stronger Coulomb interaction (Fano-Kondo case) induces larger noise.
我们从理论上比较了法诺-近藤效应与法诺效应的输运性质,重点关注三量子点(QD)系统中两能级态的影响。我们分析了零温度下法诺-近藤区域的散粒噪声特性,并讨论了量子点中强电子关联的影响。我们发现,法诺凹陷的调制受到量子点中在位库仑相互作用的强烈影响,更强的库仑相互作用(法诺-近藤情形)会导致更大的噪声。