Ramanathan Sivakumar, Patibandla Sridhar, Bandyopadhyay Supriyo, Anderson John, Edwards Jarrod D
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284, USA.
Nanotechnology. 2008 May 14;19(19):195601. doi: 10.1088/0957-4484/19/19/195601. Epub 2008 Apr 7.
We report room temperature fluorescence spectroscopy (FL) studies of ZnSe and Mn-doped ZnSe nanowires of different diameters (10, 25, 50 nm) produced by an electrochemical self-assembly technique. All samples exhibit increasing blue-shift in the band edge fluorescence with decreasing wire diameter because of quantum confinement. The 10 nm ZnSe nanowires show four distinct emission peaks due to band-to-band recombination, exciton recombination, recombination via surface states and via band gap (trap) states. The exciton binding energy in these nanowires exhibits a giant increase (∼10-fold) over the bulk value due to quantum confinement, since the effective wire radius (taking into account side depletion) is smaller than the exciton Bohr radius in bulk ZnSe. The 25 and 50 nm diameter wires show only a single FL peak due to band-to-band electron-hole recombination. In the case of Mn-doped ZnSe nanowires, the band edge luminescence in 10 nm samples is significantly quenched by Mn doping but not the exciton luminescence, which remains relatively unaffected. We observe additional features due to Mn(2+) ions. The spectra also reveal that the emission from Mn(2+) states increases in intensity and is progressively red-shifted with increasing Mn concentration.
我们报道了用电化学自组装技术制备的不同直径(10、25、50纳米)的ZnSe和Mn掺杂ZnSe纳米线的室温荧光光谱(FL)研究。由于量子限制,所有样品的带边荧光都随着线径减小而呈现出增大的蓝移。10纳米的ZnSe纳米线由于带间复合、激子复合、通过表面态和带隙(陷阱)态的复合而显示出四个不同的发射峰。由于量子限制,这些纳米线中的激子结合能相对于体材料值大幅增加(约10倍),因为有效线半径(考虑到侧面耗尽)小于体相ZnSe中的激子玻尔半径。直径为25和50纳米的线仅由于带间电子-空穴复合而显示出一个FL峰。在Mn掺杂的ZnSe纳米线的情况下,10纳米样品中的带边发光因Mn掺杂而显著猝灭,但激子发光相对未受影响。我们观察到了由于Mn(2+)离子产生的其他特征。光谱还表明,Mn(2+)态的发射强度增加,并且随着Mn浓度的增加逐渐红移。