Lee Eungman, Hahn Jae Won
Nano Photonics Laboratory, School of Mechanical Engineering, Yonsei University, 134 Sinchon-dong, Seodaemun-gu, Seoul 120-749, Republic of Korea.
Nanotechnology. 2008 Jul 9;19(27):275303. doi: 10.1088/0957-4484/19/27/275303. Epub 2008 May 27.
Using a simple theoretical model, we calculate three-dimensional profiles of photoresist exposed by arbitrarily shaped localized fields of high-transmission metal nano-apertures. We apply the finite difference time domain (FDTD) method to obtain the localized field distributions, which are generated by excitation of localized surface plasmon polaritons underneath a C-shaped or a bow-tie-shaped aperture. Incorporating the results of FDTD simulations with the theoretical model, we visualize three-dimensional exposure profiles of the photoresist as a function of the exposure dose and the gap distance between the aperture and the photoresist. It is found that the three-dimensional exposure profiles provide useful information for choosing process parameters for nanopatterning by plasmonic lithography using the aperture.
利用一个简单的理论模型，我们计算了由高透射率金属纳米孔径的任意形状局部场曝光的光刻胶的三维轮廓。我们应用时域有限差分（FDTD）方法来获得局部场分布，这些分布是由C形或蝴蝶结形孔径下方的局部表面等离子体激元的激发产生的。将FDTD模拟结果与理论模型相结合，我们将光刻胶的三维曝光轮廓可视化为曝光剂量和孔径与光刻胶之间间隙距离的函数。结果发现，三维曝光轮廓为使用该孔径的等离子体光刻纳米图案化选择工艺参数提供了有用信息。
