Ebbecke J, Maisch S, Wixforth A, Calarco R, Meijers R, Marso M, Lüth H
Experimentalphysik I, Institut für Physik der Universität Augsburg, Universitätsstraße 1, 86135 Augsburg, Germany. School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh,EH14 4AS, UK.
Nanotechnology. 2008 Jul 9;19(27):275708. doi: 10.1088/0957-4484/19/27/275708. Epub 2008 May 28.
We present acoustic charge transport in GaN nanowires (GaN NWs). The GaN NWs were grown by molecular beam epitaxy (MBE) on silicon(111) substrates. The nanowires were removed from the silicon substrate, aligned using surface acoustic waves (SAWs) on the piezoelectric substrate LiNbO(3) and finally contacted by electron beam lithography. Then, a SAW was used to create an acoustoelectric current in the GaN NWs which was detected as a function of radio-frequency (RF) wave frequency and its power. The presented method and our experimental findings open up a route towards new acoustic charge transport nanostructure devices in a wide bandgap material such as GaN.
我们展示了氮化镓纳米线（GaN NWs）中的声电荷传输。氮化镓纳米线通过分子束外延（MBE）生长在硅（111）衬底上。纳米线从硅衬底上移除，利用表面声波（SAWs）在压电衬底铌酸锂（LiNbO₃）上进行排列，最后通过电子束光刻进行接触。然后，利用表面声波在氮化镓纳米线中产生声电流，并将其作为射频（RF）波频率及其功率的函数进行检测。所提出的方法和我们的实验结果为在氮化镓等宽带隙材料中实现新型声电荷传输纳米结构器件开辟了一条途径。
