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硅和金-硅复合原子线中一维等离激元的激发。

The excitation of one-dimensional plasmons in Si and Au-Si complex atom wires.

作者信息

Liu Canhua, Inaoka Takeshi, Yaginuma Shin, Nakayama Tomonobu, Aono Masakazu, Nagao Tadaaki

机构信息

International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan. International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan.

出版信息

Nanotechnology. 2008 Sep 3;19(35):355204. doi: 10.1088/0957-4484/19/35/355204. Epub 2008 Jul 17.

Abstract

An atom-scale quantum wire array at the Au adsorbed Si(111) surface is studied by electron energy loss spectroscopy. Clear one-dimensional metallicity is verified by the observation of low-energy plasmonic excitation which exhibits a strong anisotropic dispersion. Our theoretical analysis using a quantum-mechanical nonlocal response theory shows that the plasmons are most probably supported in conductive channels made of Si honeycomb wires rather than those made of Au-Si complex wires.

摘要

利用电子能量损失谱对金吸附的硅(111)表面的原子尺度量子线阵列进行了研究。通过观察呈现出强烈各向异性色散的低能等离子体激发,证实了清晰的一维金属性。我们使用量子力学非局部响应理论进行的理论分析表明,等离子体最有可能存在于由硅蜂窝状线构成的导电通道中,而不是由金 - 硅复合线构成的通道中。

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