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通过固体源分子束外延生长的Zn(1-x)Mg(x)Te纳米线。

Zn(1-x)Mg(x)Te nanowires grown by solid source molecular beam epitaxy.

作者信息

Janik E, Dynowska E, Dłużewski P, Kret S, Presz A, Zaleszczyk W, Szuszkiewicz W, Morhange J F, Petroutchik A, Maćkowski S, Wojtowicz T

机构信息

Institute of Physics, Polish Academy of Sciences, aleja Lotników 32/46, 02-660 Warszawa, Poland.

出版信息

Nanotechnology. 2008 Sep 10;19(36):365606. doi: 10.1088/0957-4484/19/36/365606. Epub 2008 Jul 28.

DOI:10.1088/0957-4484/19/36/365606
PMID:21828877
Abstract

This paper reports on the epitaxial growth of single-crystalline ternary Zn(1-x)Mg(x)Te nanowires covering a broad compositional range of molar fraction 0≤x≤0.75. The nanowires were grown on (100), (110), and (111) GaAs substrates using a vapor-liquid-solid mechanism. Solid source molecular beam epitaxy and an Au-based nanocatalyst were used for these purposes. The composition of nanowires can be adjusted by changing the ratio of Mg to Zn molecular beam fluxes. Electron microscopy images show that the nanowires are smooth and slightly tapered. The diameters of the obtained nanowires are from 30 to 70 nm and their length is around 1 µm. X-ray diffraction analysis and transmission electron microscopy reveal that the nanowires have a zinc-blende structure throughout the whole range of obtained compositions, and have a [Formula: see text] growth axis. The Raman measurements reveal both the expected splitting and shift of phonon lines with increasing Mg content, thus proving the substitutional incorporation of Mg into metallic sites of the ZnTe lattice.

摘要

本文报道了摩尔分数在0≤x≤0.75宽成分范围内的单晶三元Zn(1-x)Mg(x)Te纳米线的外延生长。这些纳米线采用气-液-固机制在(100)、(110)和(111) GaAs衬底上生长。为此使用了固体源分子束外延和金基纳米催化剂。纳米线的成分可通过改变Mg与Zn分子束通量的比例来调节。电子显微镜图像显示纳米线表面光滑且略有锥度。所获得的纳米线直径为30至70纳米,长度约为1微米。X射线衍射分析和透射电子显微镜表明,在所获得的整个成分范围内,纳米线具有闪锌矿结构,且生长轴为[化学式:见原文]。拉曼测量结果表明,随着Mg含量的增加,声子线出现了预期的分裂和位移,从而证明Mg已替代掺入到ZnTe晶格的金属位点中。

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