School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
Chem Commun (Camb). 2011 Sep 28;47(36):10070-2. doi: 10.1039/c1cc12648b. Epub 2011 Aug 9.
Graphene oxide (GO) sheet is used as a novel substrate for dip-pen nanolithography (DPN). After GO is transferred onto SiO(2) using the Langmuir-Blodgett technique, CoCl(2) is patterned on both GO and exposed SiO(2) substrates simultaneously by DPN, which is used for growth of different structured carbon nanotubes.
氧化石墨烯（GO）片被用作一种新型的蘸笔纳米光刻（DPN）基底。在使用 Langmuir-Blodgett 技术将 GO 转移到 SiO2 上之后，通过 DPN 同时在 GO 和暴露的 SiO2 基底上图案化 CoCl2，这用于生长不同结构的碳纳米管。
