Ohtsubo Yoshiyuki, Hatta Shinichiro, Iwata Manabu, Yaji Koichiro, Okuyama Hiroshi, Aruga Tetsuya
Department of Chemistry, Graduate School of Science, Kyoto University, Kyoto 606-8502, Japan. JST CREST, Saitama 332-0012, Japan.
J Phys Condens Matter. 2009 Oct 7;21(40):405001. doi: 10.1088/0953-8984/21/40/405001. Epub 2009 Sep 8.
We have determined the atomic structure of the Bi/Ge(111)-[Formula: see text] surface by dynamical low-energy electron diffraction (LEED) analysis and scanning tunneling microscopy (STM). The optimized atomic structure consists of Bi atoms which are adsorbed near the T(1) sites of the bulk-truncated Ge(111) surface and form triangular trimer units centered at the T(4) sites. The atomically resolved STM image was consistent with the LEED result. The structural parameters agree well with those optimized by a first-principles calculation which supports the interpretation of the electronic band splitting on this surface in terms of the giant Rashba effect.
我们通过动态低能电子衍射（LEED）分析和扫描隧道显微镜（STM）确定了Bi/Ge(111)-[公式：见原文]表面的原子结构。优化后的原子结构由吸附在体截断Ge(111)表面T(1)位点附近的Bi原子组成，并形成以T(4)位点为中心的三角形三聚体单元。原子分辨的STM图像与LEED结果一致。结构参数与通过第一性原理计算优化的参数非常吻合，这支持了根据巨大的Rashba效应来解释该表面上的电子能带分裂。
