Barticevic Z, Pacheco M, Duque C A, Oliveira L E
Departamento de Física, Universidad Técnica Federico Santa María, Casilla 110-V, Valparaíso, Chile.
J Phys Condens Matter. 2009 Oct 7;21(40):405801. doi: 10.1088/0953-8984/21/40/405801. Epub 2009 Sep 14.
A theoretical study of the electronic and optical properties of laterally coupled quantum dots, under applied magnetic fields perpendicular to the plane of the dots, is presented. The exciton energy levels of such laterally coupled quantum-dot systems, together with the corresponding wavefunctions and eigenvalues, are obtained in the effective-mass approximation by using an extended variational approach in which the magnetoexciton states are simultaneously obtained. One achieves the expected limits of one single quantum dot, when the distance between the dots is zero, and of two uncoupled quantum dots, when the distance between the dots is large enough. Moreover, present calculations-with appropriate structural dimensions of the two-dot system-are shown to be in agreement with measurements in self-assembled laterally aligned GaAs quantum-dot pairs and naturally/accidentally occurring coupled quantum dots in GaAs/GaAlAs quantum wells.
本文给出了在垂直于量子点平面施加磁场的情况下，横向耦合量子点的电子和光学性质的理论研究。通过使用扩展变分方法，在有效质量近似下获得了这种横向耦合量子点系统的激子能级，以及相应的波函数和本征值，其中同时获得了磁激子态。当量子点之间的距离为零时，可得到单个量子点的预期极限情况；当量子点之间的距离足够大时，可得到两个未耦合量子点的预期极限情况。此外，对于具有适当结构尺寸的双量子点系统的当前计算结果，与自组装横向排列的GaAs量子点对以及GaAs/GaAlAs量子阱中自然/偶然出现的耦合量子点的测量结果一致。
