Sinchenko A A, Chernikov R V, Ivanov A A, Monceau P, Crozes Th, Brazovskii S A
Moscow Engineering-Physics Institute, 115409 Moscow, Russia. Institut NEEL, CNRS and Université Joseph Fourier, BP 166, 38042 Grenoble, France.
J Phys Condens Matter. 2009 Oct 28;21(43):435601. doi: 10.1088/0953-8984/21/43/435601. Epub 2009 Oct 5.
Results of Hall effect measurements are reported both below and above the threshold electric field, E(t), for depinning the low temperature charge density wave (CDW) in NbSe(3) in a wide temperature range. At low electric fields, below E(t), we have observed a change in the sign of the Hall voltage at all temperatures lower than T(p2). Comparison between the Hall effect and the magnetoresistance behavior indicates that the n-type conductivity in the low magnetic field range differs qualitatively from the p-type conductivity in the high field range. We demonstrate that at low temperature the CDW motion significantly alters the Hall voltage. These results indicate that, in NbSe(3), the CDW in the sliding state interacts essentially with holes. Possible mechanisms of this effect are discussed.
本文报道了在很宽的温度范围内，低于和高于用于使NbSe(3)中低温电荷密度波（CDW）脱钉的阈值电场E(t)时的霍尔效应测量结果。在低于E(t)的低电场下，我们观察到在所有低于T(p2)的温度下霍尔电压的符号发生了变化。霍尔效应与磁阻行为之间的比较表明，低磁场范围内的n型电导率与高磁场范围内的p型电导率在性质上有所不同。我们证明，在低温下CDW的运动会显著改变霍尔电压。这些结果表明，在NbSe(3)中，处于滑动状态的CDW主要与空穴相互作用。文中讨论了这种效应可能的机制。
