Chan K S, Wang L G
Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Hong Kong SAR, People's Republic of China.
Nanotechnology. 2008 Oct 8;19(40):405401. doi: 10.1088/0957-4484/19/40/405401. Epub 2008 Aug 20.
The interaction between two nanowire cross-junctions is studied in a three-wire double-junction structure. The dc conductances between terminals in the double-junction structure are calculated from the Green's function, which is obtained using the modular Green's function approach. Significant oscillations are found in the inter-wire conductances in both junctions, which are the consequence of interference of electron waves reflected between junctions. A phenomenological expression, which can relate the positions of neighboring oscillation peaks, is developed based on the interference mechanism. The interaction between quasi-bound states formed at the junctions is found to be negligible and has no significant effect on the inter-wire conductance peaks. Our results show that interaction between neighboring junctions should be properly considered in the modeling and design of nanowire devices and circuits.
在三线双结结构中研究了两个纳米线交叉结之间的相互作用。双结结构中端之间的直流电导由格林函数计算得出，该格林函数是使用模块化格林函数方法获得的。在两个结中的线间电导中都发现了显著的振荡，这是结之间反射的电子波干涉的结果。基于干涉机制，推导了一个可以关联相邻振荡峰位置的唯象表达式。发现在结处形成的准束缚态之间的相互作用可以忽略不计，并且对线间电导峰没有显著影响。我们的结果表明，在纳米线器件和电路的建模与设计中应适当考虑相邻结之间的相互作用。
