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混合CuPcF(16)/GaAs半导体界面电子转移的联合光谱表征

Combined spectroscopic characterization of electron transfer at hybrid CuPcF(16)/GaAs semiconductor interfaces.

作者信息

Cabanillas-Gonzalez Juan, Egelhaaf Hans-Joachim, Brambilla Alberto, Sessi Paolo, Duò Lamberto, Finazzi Marco, Ciccacci Franco, Lanzani Guglielmo

机构信息

IFN-CNR, Dipartimento di Fisica, ULTRAS-INFM, Politecnico di Milano, Milano 20133, Italy.

出版信息

Nanotechnology. 2008 Oct 22;19(42):424010. doi: 10.1088/0957-4484/19/42/424010. Epub 2008 Sep 25.

Abstract

We characterize photoinduced charge injection at the interface between a fluorinated copper phthalocyanine (CuPcF(16)) film deposited over a GaAs(100) wafer by means of pump-probe spectroscopy combined with ultraviolet photoemission spectroscopy (UPS) and electromodulated transmission spectroscopy. UPS characterization of the hybrid interface demonstrates that the CuPcF(16) 's lowest unoccupied molecular level (LUMO) is almost aligned with the GaAs conduction band. Upon photoexcitation of the hybrid interface with 150 fs pulses we observe an efficient photoinduced electron transfer from CuPcF(16) to GaAs. The evolution of interfacial CuPcF(16) charges appear to be strongly influenced by energy level alignment at the GaAs/CuPcF(16) heterojunction.

摘要

我们通过泵浦-探测光谱结合紫外光电子能谱(UPS)和电调制透射光谱,对沉积在GaAs(100)晶片上的氟化铜酞菁(CuPcF(16))薄膜界面处的光致电荷注入进行了表征。对混合界面的UPS表征表明,CuPcF(16)的最低未占据分子轨道(LUMO)几乎与GaAs导带对齐。用150飞秒脉冲对混合界面进行光激发时,我们观察到从CuPcF(16)到GaAs的有效光致电子转移。界面CuPcF(16)电荷的演化似乎受到GaAs/CuPcF(16)异质结处能级对齐的强烈影响。

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